Global Automotive Silicon Carbide (SiC) Power Modules Market Growth 2025-2031

Report ID: 3021220 | Published Date: Feb 2026 | No. of Page: 144 | Base Year: 2025 | Rating: 4.3 | Webstory: Check our Web story
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Impact of U.S Tarrifs Analyzed 2025

The global Automotive Silicon Carbide (SiC) Power Modules market size is predicted to grow from US$ 1416 million in 2025 to US$ 2801 million in 2031; it is expected to grow at a CAGR of 12.0% from 2025 to 2031.

Automotive silicon carbide module is an electronic device used in automobile electric transmission systems. It consists of multiple silicon carbide chips, radiators, insulating materials and connectors. As the core component of the module, silicon carbide chips are manufactured using modern semiconductor technology and can achieve high power, high efficiency, and high frequency control and switching. They are suitable for inverters, chargers, DC-DC converters, etc. of electric vehicles. Various applications.

Growing demand: As electric and hybrid vehicles gain popularity, demand for efficient, high-performance electronic devices increases. Silicon carbide modules are widely used in automotive power conversion and motor control scenarios due to their high efficiency, high temperature resistance, and long life. Therefore, the demand for automotive silicon carbide modules is also growing.

Technological progress: As silicon carbide device manufacturing technology continues to advance, its reliability, stability and performance are also constantly improving. This further promotes the development of the automotive silicon carbide module market.

Segmentation by Type:

  • SiC MOSFET+SiC SBD Type
  • SiC MOSFET Only Type

Segmentation by Application:

  • Passenger Cars
  • Commercial Vehicles

Market by Region:

  • Americas
  • APAC
  • Europe
  • Middle East & Africa

Company Coverage:

  • Infineon Technologies
  • ON Semiconductor
  • Mitsubishi Electric
  • STMicroelectronics
  • Fuji Electric
  • Cree
  • Texas Instruments
  • Renesas Electronics
  • Power Integrations
  • Toshiba
  • IXYS
  • Vishay Intertechnology
  • Vicor
  • Allegro MicroSystems
  • Analog Devices
  • NXP Semiconductors
  • Wolfspeed
  • ROHM Semiconductor
  • GeneSiC Semiconductor

Key Questions Addressed in this Report:

  1. What is the 10-year outlook for the global Automotive Silicon Carbide (SiC) Power Modules market?
  2. What factors are driving Automotive Silicon Carbide (SiC) Power Modules market growth, globally and by region?
  3. Which technologies are poised for the fastest growth by market and region?
  4. How do Automotive Silicon Carbide (SiC) Power Modules market opportunities vary by end market size?
  5. How does Automotive Silicon Carbide (SiC) Power Modules break out by Type, by Application?
Frequently Asked Questions
Automotive Silicon Carbide (SiC) Power Modules report offers great insights of the market and consumer data and their interpretation through various figures and graphs. Report has embedded global market and regional market deep analysis through various research methodologies. The report also offers great competitor analysis of the industries and highlights the key aspect of their business like success stories, market development and growth rate.
Automotive Silicon Carbide (SiC) Power Modules report is categorised based on following features:
  1. Global Market Players
  2. Geopolitical regions
  3. Consumer Insights
  4. Technological advancement
  5. Historic and Future Analysis of the Market
Automotive Silicon Carbide (SiC) Power Modules report is designed on the six basic aspects of analysing the market, which covers the SWOT and SWAR analysis like strength, weakness, opportunity, threat, aspirations and results. This methodology helps investors to reach on to the desired and correct decision to put their capital into the market.

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